IndiumV3, Main, Repository, bibRecord, 001C79

Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

Identifieur interne : 001C79 ( Main/Repository ); précédent : 001C78; suivant : 001C80

Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

Auteurs : RBID : Pascal:12-0274608

Descripteurs français

Pascal (Inist)
- Propriété électronique, Joint grain, Polycristal, Force électrostatique, Travail sortie, Microscopie force, Traitement chimique, Analyse donnée, Barrière potentiel, Evaluation performance, Cellule couche mince, Cellule solaire, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Couche mince, Cu(In,Ga)Se2.

English descriptors

KwdEn :
- Chemical treatment, Copper selenides, Data analysis, Electronic properties, Electrostatic force, Force microscopy, Gallium selenides, Grain boundary, Indium selenides, Performance evaluation, Polycrystal, Potential barrier, Quaternary compound, Solar cell, Thin film, Thin film cell, Work function.

Abstract

We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se₂ (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from - 118 mV to + 114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content.

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Pascal:12-0274608

Le document en format XML

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 thin films with various Ga-contents</title>
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<s3>DEU</s3>
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<author><name sortKey="Lehmann, Jascha" uniqKey="Lehmann J">Jascha Lehmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
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<author><name sortKey="Lehmann, Sebastian" uniqKey="Lehmann S">Sebastian Lehmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Solid State Physics, Lund University, Box 118</s1>
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<author><name sortKey="Rissom, Thorsten" uniqKey="Rissom T">Thorsten Rissom</name>
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<author><name sortKey="Alexander Kaufmann, Christian" uniqKey="Alexander Kaufmann C">Christian Alexander Kaufmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
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<author><name sortKey="Schwarzmann, Alex" uniqKey="Schwarzmann A">Alex Schwarzmann</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University</s1>
<s2>Tel-Aviv 69978</s2>
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<country>Israël</country>
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<author><name sortKey="Rosenwaks, Yossi" uniqKey="Rosenwaks Y">Yossi Rosenwaks</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University</s1>
<s2>Tel-Aviv 69978</s2>
<s3>ISR</s3>
<sZ>6 aut.</sZ>
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<author><name sortKey="Lux Steiner, Martha Ch" uniqKey="Lux Steiner M">Martha Ch. Lux-Steiner</name>
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<s2>14109 Berlin</s2>
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<author><name sortKey="Sadewasser, Sascha" uniqKey="Sadewasser S">Sascha Sadewasser</name>
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<s2>14109 Berlin</s2>
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<sZ>1 aut.</sZ>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
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<term>Electronic properties</term>
<term>Electrostatic force</term>
<term>Force microscopy</term>
<term>Gallium selenides</term>
<term>Grain boundary</term>
<term>Indium selenides</term>
<term>Performance evaluation</term>
<term>Polycrystal</term>
<term>Potential barrier</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>Thin film</term>
<term>Thin film cell</term>
<term>Work function</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électronique</term>
<term>Joint grain</term>
<term>Polycristal</term>
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<term>Travail sortie</term>
<term>Microscopie force</term>
<term>Traitement chimique</term>
<term>Analyse donnée</term>
<term>Barrière potentiel</term>
<term>Evaluation performance</term>
<term>Cellule couche mince</term>
<term>Cellule solaire</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Couche mince</term>
<term>Cu(In,Ga)Se2</term>
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<front><div type="abstract" xml:lang="en">We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se<sub>2</sub>
 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from - 118 mV to + 114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content.</div>
</front>
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<s2>22100 Lund</s2>
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<sZ>3 aut.</sZ>
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<fA14 i1="03"><s1>Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University</s1>
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<fC01 i1="01" l="ENG"><s0>We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se<sub>2</sub>
 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from - 118 mV to + 114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content.</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Data analysis</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Análisis datos</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Performance evaluation</s0>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
</fC03>
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<s5>12</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s2>NK</s2>
<s5>22</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Copper selenides</s0>
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<s5>24</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Composé quaternaire</s0>
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<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>205</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents
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Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

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